有限会社ルーチェラボ

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会社概要

有限会社ルーチェラボ

住所

〒453-0806

名古屋市中村区大正町4丁目35番地

TEL

052-452-5523

FAX

052-485-6716

MAIL

amabuchi@lucelabo.jp

研究成果 英文

The good results are obtained since we started the research of nitrides.
Please contact us about questions, consultation and collaboration of research.

Year Classification Results of R&D
2003 Patent H. Minoura, A. Mabuchi, K. Manabe, “Method for Manufacture of Group Ⅲ Nitrides” Japanese Patent No.2003-394213.
2005 Thesis

A. Mabuchi, Y. Iwase, E. Yasuda, T. Sugiura and H. Minoura, “Preparation of GaN Crystals by a Reaction of Ga2O3 with Li3N” J. Ceram. Soci. Jpn, 113[4] 291-296(2005).

http://www.ceramic.or.jp/welcomej.html

A. Mabuchi, Y. Iwase, T. Sugiura and H. Minoura, “Low Temperature Synthesis of LigaO2 Using Lithium Nitride” J. Ceram. Soci. Jpn, 113[5] 368-372(2005).

http://www.ceramic.or.jp/welcomej.html

Mabuchi, “A Novel Synthetic Route to Preparation of Group Ⅲ Nitrides by Using Li3N” A doctoral thesis of Gifu University, Doctor of Engineering Kou No.83.

2006 Domestic
conference

37th Annual Meeting of Union of Chemistry-Related Societies in Chubu Area, Japan(Aichi, Aichi Institute of Technology Yakusa Campus) 12-13 Nov. 2006
「Preparation of Visible Light Response Photo-catalyst by Nitriding TiO2 Using Li3N」(2K07)

  • T. Ajioka, A. Mabuchi, T. Sugiura and H. Minoura
    Synthesis of Tantalum Nitride by the Reaction of Ta2O5 with Li3N(2K08)
  • M. Hayashi, A. Mabuchi, T. Sugiura and H. Minoura
2007 Patent

A.Mabuchi, H. Minoura, T. Sugiura, T. Hirano and M. Hayashi, “Method of Manufacture of Group Ⅲ Nitrides and Transition Metal Nitrides” Japanese Patent No.2007-133756.

A. Mabuchi, H. Minoura and T. Sugiura “Method for Manufacture of GaN” Japanese Patent No.2007-196134.

H. Minoura, A. Mabuchi, K. Manabe, “Method for Manufacture of Group Ⅲ Nitrides at Low Temperature and Low Pressure” Japanese Patent No.2003-394213. Registered. No.4034261.

  Thesis A. Mabuchi, T. Hirano, T. Sugiura and H. Minoura, Preparation of GaN Crystals by a Reaction of Ga with Li3N” IEICE Technical Report, LQE 107(23) pp.103-107, 2007 1004.
  International
conference

International Conference on Advanced Materials and Applications, (Department of Physics, Shivaji University, Kolhapur, India) 15-17 Novem.2007
「Preparation of GaN Crystals by the Reaction of Li3N with Ga2O3 and Ga」

  • A. Mabuchi
  Domestic
conference

2007 Autumn Meeting of the Japan Institute Metals, (Gifu University) 19-21 Sept.2007
「Crystal Growth of GaN by the Reaction of Ga2O3 with Li3N in Liquid Ga」(S4-8 20 Sept.)

  • T. Zhang, A. Mabuchi, T. Sugiura and H. Minoura
    「Synthesis of GaN by Using Ga and Li3N」(S4-9 20 Sept.)
  • T. Hirano, A. Mabuchi, T. Sugiura and H. Minoura
    「Synthesis of TiN by the Reaction of Li3N」(208 20 Sept.)
  • T. Ajioka, A. Mabuchi, T. Sugiura and H. Minoura
    「Synthesis of TaN by Using Li3N as a Nitrogen Sauce」(209 20 Sept.)
  • M. Hayashi, A. Mabuchi, T. Sugiura and H. Minoura IEICE
    Technical Committee Conference(Fukui, Memorial Hall, Bunkyo Campus, Fukui University) 12 Oct.2007
    「Preparation of GaN Crystals by a Reaction of Ga with Li3N」
  • A. Mabuchi, T. Hirano, T. Sugiura and H. Minoura

17th Japan Materials Research Society Symposium (Tokyo, Nihon University Faculty of Science and Technology, Surugadai Campus)7-9 Decm.2007
「Crystal Growth of GaN by the Reaction of Ga2O3 with Li3Nin Liquid Ga」(Q-P01-G)
T. Zhang, A. Mabuchi, T. Sugiura and H. Minoura

2008 Thesis T. Zhang, A. Mabuchi, T. Sugiura, and Minoura, “Crystal Growth of GaN by the Reaction of Ga2O3 with Li3N in Liquid Ga”, Trans. Mater, Res. Jpn., in press.
2009 Thesis T. Hirano, A. Mabuchi, T. Sugiura and Minoura, “Synthesis of GaN crystals by the reaction of Ga with Li3N in NH3 atmosphere” J. Cryst. Growth, [311]3040-3043(2009).

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